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| Part Number | IPAN70R600P7SXKSA1 | IPAN70R900P7SXKSA1 | IPA70R600P7SXKSA1 | IPAN60R600P7SXKSA1 |
|---|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Status | Active | Active | Active | Active |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 700 V | 700 V | 700 V | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 8.5A (Tc) | 6A (Tc) | 8.5A (Tc) | 6A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 1.8A, 10V | 900mOhm @ 1.1A, 10V | 600mOhm @ 1.8A, 10V | 600mOhm @ 1.7A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 90µA | 3.5V @ 60µA | 3.5V @ 90µA | 4V @ 80µA |
| Gate Charge (Qg) (Max) @ Vgs | 10.5 nC @ 10 V | 6.8 nC @ 10 V | 10.5 nC @ 10 V | 9 nC @ 10 V |
| Vgs (Max) | ±16V | ±16V | ±16V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 364 pF @ 400 V | 211 pF @ 400 V | 364 pF @ 400 V | 363 pF @ 400 V |
| FET Feature | - | - | - | - |
| Power Dissipation (Max) | 24.9W (Tc) | 17.9W (Tc) | 25W (Tc) | 21W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Supplier Device Package | PG-TO220-FP | PG-TO220-FP | PG-TO220-3-FP | PG-TO220 Full Pack |
| Package / Case | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack |
