IPAN65R650CEXKSA1
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Infineon Technologies IPAN65R650CEXKSA1

Manufacturer No:
IPAN65R650CEXKSA1
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
IPAN65R650CEXKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 650V 10.1A TO220
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:10.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:650mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id:3.5V @ 210µA
Gate Charge (Qg) (Max) @ Vgs:23 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:440 pF @ 100 V
FET Feature:Super Junction
Power Dissipation (Max):28W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-FP
Package / Case:TO-220-3 Full Pack
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$0.93
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Similar Products

Part Number IPAN65R650CEXKSA1 IPA65R650CEXKSA1   IPAN60R650CEXKSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V 600 V
Current - Continuous Drain (Id) @ 25°C 10.1A (Tc) 7A (Tc) 9.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 650mOhm @ 2.1A, 10V 650mOhm @ 2.1A, 10V 650mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id 3.5V @ 210µA 3.5V @ 210µA 3.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V 23 nC @ 10 V 20.5 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 440 pF @ 100 V 440 pF @ 100 V 440 pF @ 100 V
FET Feature Super Junction - Super Junction
Power Dissipation (Max) 28W (Tc) 28W (Tc) 28W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package PG-TO220-FP PG-TO220-3-FP PG-TO220-FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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