IPAN60R800CEXKSA1
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Infineon Technologies IPAN60R800CEXKSA1

Manufacturer No:
IPAN60R800CEXKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPAN60R800CEXKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 8.4A TO220
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:8.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:800mOhm @ 2A, 10V
Vgs(th) (Max) @ Id:3.5V @ 170µA
Gate Charge (Qg) (Max) @ Vgs:17.2 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:373 pF @ 100 V
FET Feature:Super Junction
Power Dissipation (Max):27W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-FP
Package / Case:TO-220-3 Full Pack
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$1.36
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Similar Products

Part Number IPAN60R800CEXKSA1 IPA60R800CEXKSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Not For New Designs Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 8.4A (Tc) 5.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 800mOhm @ 2A, 10V 800mOhm @ 2A, 10V
Vgs(th) (Max) @ Id 3.5V @ 170µA 3.5V @ 170µA
Gate Charge (Qg) (Max) @ Vgs 17.2 nC @ 10 V 17.2 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 373 pF @ 100 V 373 pF @ 100 V
FET Feature Super Junction -
Power Dissipation (Max) 27W (Tc) 27W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO220-FP PG-TO220-FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack

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