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| Part Number | IPAN60R650CEXKSA1 | IPAN65R650CEXKSA1 | IPA60R650CEXKSA1 |
|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Status | Active | Active | Active |
| FET Type | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V | 650 V | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 9.9A (Tc) | 10.1A (Tc) | 7A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 650mOhm @ 2.4A, 10V | 650mOhm @ 2.1A, 10V | 650mOhm @ 2.4A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 200µA | 3.5V @ 210µA | 3.5V @ 200µA |
| Gate Charge (Qg) (Max) @ Vgs | 20.5 nC @ 10 V | 23 nC @ 10 V | 20.5 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 440 pF @ 100 V | 440 pF @ 100 V | 440 pF @ 100 V |
| FET Feature | Super Junction | Super Junction | - |
| Power Dissipation (Max) | 28W (Tc) | 28W (Tc) | 28W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Through Hole | Through Hole |
| Supplier Device Package | PG-TO220-FP | PG-TO220-FP | PG-TO220-FP |
| Package / Case | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack |
