Infineon Technologies-IPAN60R360PFD7SXKSA1 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	650 V
Current - Continuous Drain (Id) @ 25°C:	10A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	360mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id:	4.5V @ 140µA
Gate Charge (Qg) (Max) @ Vgs:	12.7 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	534 pF @ 400 V
FET Feature:	-
Power Dissipation (Max):	23W (Tc)
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	PG-TO220-FP
Package / Case:	TO-220-3 Full Pack

Infineon Technologies IPAN60R360PFD7SXKSA1