IPAN60R360P7SXKSA1
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Infineon Technologies IPAN60R360P7SXKSA1

Manufacturer No:
IPAN60R360P7SXKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPAN60R360P7SXKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 650V 9A TO220
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:360mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id:4V @ 140µA
Gate Charge (Qg) (Max) @ Vgs:13 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:555 pF @ 400 V
FET Feature:- 
Power Dissipation (Max):22W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220 Full Pack
Package / Case:TO-220-3 Full Pack
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Similar Products

Part Number IPAN60R360P7SXKSA1 IPAW60R360P7SXKSA1   IPAN70R360P7SXKSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V 700 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc) 9A (Tc) 12.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 360mOhm @ 2.7A, 10V 360mOhm @ 2.7A, 10V 360mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 4V @ 140µA 4V @ 140µA 3.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V 13 nC @ 10 V 16.4 nC @ 10 V
Vgs (Max) ±20V ±30V ±16V
Input Capacitance (Ciss) (Max) @ Vds 555 pF @ 400 V 555 pF @ 400 V 517 pF @ 400 V
FET Feature - - -
Power Dissipation (Max) 22W (Tc) 22W (Tc) 26.5W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package PG-TO220 Full Pack PG-TO220 Full Pack PG-TO220-FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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