IPAN60R280PFD7SXKSA1
  • Share:

Infineon Technologies IPAN60R280PFD7SXKSA1

Manufacturer No:
IPAN60R280PFD7SXKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPAN60R280PFD7SXKSA1 Datasheet
ECAD Model:
-
Description:
CONSUMER PG-TO220-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:280mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id:4.5V @ 180µA
Gate Charge (Qg) (Max) @ Vgs:15.3 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:656 pF @ 400 V
FET Feature:- 
Power Dissipation (Max):24W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-FP
Package / Case:TO-220-3 Full Pack
0 Remaining View Similar

In Stock

$2.10
415

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPAN60R280PFD7SXKSA1 IPAN60R210PFD7SXKSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 650 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc) 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 280mOhm @ 3.6A, 10V 210mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id 4.5V @ 180µA 4.5V @ 240µA
Gate Charge (Qg) (Max) @ Vgs 15.3 nC @ 10 V 23 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 656 pF @ 400 V 1015 pF @ 400 V
FET Feature - -
Power Dissipation (Max) 24W (Tc) 25W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO220-FP PG-TO220-FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack

Related Product By Categories

SI2377EDS-T1-GE3
SI2377EDS-T1-GE3
Vishay Siliconix
MOSFET P-CH 20V 4.4A SOT23-3
ZVN4310A
ZVN4310A
Diodes Incorporated
MOSFET N-CH 100V 900MA TO92-3
SUP80090E-GE3
SUP80090E-GE3
Vishay Siliconix
MOSFET N-CH 150V 128A TO220AB
IPB021N06N3G
IPB021N06N3G
Infineon Technologies
N-CHANNEL POWER MOSFET
APT5020BVFRG
APT5020BVFRG
Microchip Technology
MOSFET N-CH 500V 26A TO247
TK560A60Y,S4X
TK560A60Y,S4X
Toshiba Semiconductor and Storage
MOSFET N-CH 600V 7A TO220SIS
IRFR3910TRL
IRFR3910TRL
Infineon Technologies
MOSFET N-CH 100V 16A DPAK
IXFR26N50
IXFR26N50
IXYS
MOSFET N-CH 500V 26A ISOPLUS247
AON7450
AON7450
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 100V 5.6A/21A 8DFN
STU3LN62K3
STU3LN62K3
STMicroelectronics
MOSFET N-CH 620V 2.5A IPAK
2N6764
2N6764
Microsemi Corporation
MOSFET N-CH 100V 38A TO3
2SK2887TL
2SK2887TL
Rohm Semiconductor
MOSFET N-CH 200V 3A CPT3

Related Product By Brand

EVAL2101HBLLCTOBO1
EVAL2101HBLLCTOBO1
Infineon Technologies
EVAL BRD
KITLGPWRBOM008TOBO1
KITLGPWRBOM008TOBO1
Infineon Technologies
EVAL POWER BOARD 250V
BCR48PNH6327
BCR48PNH6327
Infineon Technologies
BIPOLAR DIGITAL TRANSISTOR
BSC118N10NSG
BSC118N10NSG
Infineon Technologies
BSC118N10 - 12V-300V N-CHANNEL P
IRL3803VPBF
IRL3803VPBF
Infineon Technologies
MOSFET N-CH 30V 140A TO220AB
IRLR8743PBF
IRLR8743PBF
Infineon Technologies
MOSFET N-CH 30V 160A DPAK
IRG4RC10UTRPBF
IRG4RC10UTRPBF
Infineon Technologies
IGBT 600V 8.5A 38W DPAK
PVI5033RPBF
PVI5033RPBF
Infineon Technologies
OPTOISO 3.75KV 2CH PHVOLT 8-DIP
CY3280-MBR3
CY3280-MBR3
Infineon Technologies
BOARD EVAL CAPSENSE EXPRESS
CY2DP818ZXI-2
CY2DP818ZXI-2
Infineon Technologies
IC CLK BUFFER 1:8 350MHZ 38TSSOP
MB90214PF-GT-291-BND-AE1
MB90214PF-GT-291-BND-AE1
Infineon Technologies
IC MCU 16BIT 64KB MROM 80PQFP
S25FL128SAGMFM001
S25FL128SAGMFM001
Infineon Technologies
IC FLASH 128MBIT SPI/QUAD 16SOIC