IPAN60R180P7SXKSA1
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Infineon Technologies IPAN60R180P7SXKSA1

Manufacturer No:
IPAN60R180P7SXKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPAN60R180P7SXKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET 600V TO220 FULL PACK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-FP
Package / Case:TO-220-3 Full Pack
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$2.43
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Similar Products

Part Number IPAN60R180P7SXKSA1 IPAW60R180P7SXKSA1   IPAN60R280P7SXKSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active
FET Type - N-Channel N-Channel
Technology - MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc) 18A (Tc) 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 10V 10V
Rds On (Max) @ Id, Vgs - 180mOhm @ 5.6A, 10V 280mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id - 4V @ 280µA 4V @ 190µA
Gate Charge (Qg) (Max) @ Vgs - 25 nC @ 10 V 18 nC @ 10 V
Vgs (Max) - ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds - 1081 pF @ 400 V 761 pF @ 400 V
FET Feature - - -
Power Dissipation (Max) - 26W (Tc) 24W (Tc)
Operating Temperature - -55°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package PG-TO220-FP PG-TO220 Full Pack PG-TO220 Full Pack
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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