IPA80R650CEXKSA2
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Infineon Technologies IPA80R650CEXKSA2

Manufacturer No:
IPA80R650CEXKSA2
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPA80R650CEXKSA2 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 800V 8A TO220-3F
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:650mOhm @ 5.1A, 10V
Vgs(th) (Max) @ Id:3.9V @ 470µA
Gate Charge (Qg) (Max) @ Vgs:45 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1100 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):33W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3F
Package / Case:TO-220-3 Full Pack
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Similar Products

Part Number IPA80R650CEXKSA2 IPA80R650CEXKSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Discontinued at Digi-Key
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 8A (Ta) 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 650mOhm @ 5.1A, 10V 650mOhm @ 5.1A, 10V
Vgs(th) (Max) @ Id 3.9V @ 470µA 3.9V @ 470µA
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V 45 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1100 pF @ 100 V 1100 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 33W (Tc) 33W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220-3F PG-TO220-FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack

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