IPA80R310CEXKSA2
  • Share:

Infineon Technologies IPA80R310CEXKSA2

Manufacturer No:
IPA80R310CEXKSA2
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPA80R310CEXKSA2 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 800V 16.7A TO220-FP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:16.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:310mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:3.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:91 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2320 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):35W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-FP
Package / Case:TO-220-3 Full Pack
0 Remaining View Similar

In Stock

$4.14
24

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPA80R310CEXKSA2 IPA80R310CEXKSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Discontinued at Digi-Key
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 16.7A (Tc) 6.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V -
Rds On (Max) @ Id, Vgs 310mOhm @ 11A, 10V 310mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 3.9V @ 1mA 3.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 91 nC @ 10 V 91 nC @ 10 V
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 2320 pF @ 100 V 2320 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 35W (Tc) 35W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO220-FP PG-TO220-FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack

Related Product By Categories

STD35NF3LLT4
STD35NF3LLT4
STMicroelectronics
MOSFET N-CH 30V 35A DPAK
FQPF2N70
FQPF2N70
Fairchild Semiconductor
MOSFET N-CH 700V 2A TO220F
ZXMP10A18KTC
ZXMP10A18KTC
Diodes Incorporated
MOSFET P-CH 100V 3.8A TO252-3
NVMFS5C628NWFT1G
NVMFS5C628NWFT1G
onsemi
MOSFET N-CH 60V 28A/150A 5DFN
IRF250P224
IRF250P224
Infineon Technologies
MOSFET N-CH 250V 96A TO247AC
EPC2014
EPC2014
EPC
GANFET N-CH 40V 10A DIE OUTLINE
IRF840L
IRF840L
Vishay Siliconix
MOSFET N-CH 500V 8A I2PAK
ZVN4206ASTOA
ZVN4206ASTOA
Diodes Incorporated
MOSFET N-CH 60V 600MA E-LINE
IPI45N06S3-16
IPI45N06S3-16
Infineon Technologies
MOSFET N-CH 55V 45A TO262-3
MTB50P03HDLG
MTB50P03HDLG
onsemi
MOSFET P-CH 30V 50A D2PAK
TK4A60DA(STA4,Q,M)
TK4A60DA(STA4,Q,M)
Toshiba Semiconductor and Storage
MOSFET N-CH 600V 3.5A TO220SIS
NVMFS4841NT1G
NVMFS4841NT1G
onsemi
MOSFET N-CH 30V 16A 5DFN

Related Product By Brand

ESD240B1W01005E6327XTSA1
ESD240B1W01005E6327XTSA1
Infineon Technologies
TVS DIODE 22VWM 27VC WLL-2-2
ETD540N22P60HPSA1
ETD540N22P60HPSA1
Infineon Technologies
THYR / DIODE MODULE DK
IPD80R600P7ATMA1
IPD80R600P7ATMA1
Infineon Technologies
MOSFET N-CH 800V 8A TO252-3
IRFR2407TRL
IRFR2407TRL
Infineon Technologies
MOSFET N-CH 75V 42A DPAK
IPD60R380P6BTMA1
IPD60R380P6BTMA1
Infineon Technologies
MOSFET N-CH 600V 10.6A TO252-3
FS200R06KE3BOSA1
FS200R06KE3BOSA1
Infineon Technologies
IGBT MOD 600V 200A 600W
MB89635RPF-G-1460
MB89635RPF-G-1460
Infineon Technologies
IC MCU 8BIT 16KB MROM 64QFP
CY9AF156NAPMC-G-JNE2
CY9AF156NAPMC-G-JNE2
Infineon Technologies
IC MCU 32BIT 544KB FLASH 100LQFP
MB89935BPFV-G-221-BND-ER
MB89935BPFV-G-221-BND-ER
Infineon Technologies
IC MCU 8BIT 16KB MROM 30SSOP
CY7C68000-56PVXC
CY7C68000-56PVXC
Infineon Technologies
IC TRANSCEIVER FULL 1/1 56SSOP
S29GL512S10FHI020
S29GL512S10FHI020
Infineon Technologies
IC FLASH 512MBIT PARALLEL 64BGA
CY7C185-35SC
CY7C185-35SC
Infineon Technologies
IC SRAM 64KBIT PARALLEL 28SOJ