IPA80R310CEXKSA2
  • Share:

Infineon Technologies IPA80R310CEXKSA2

Manufacturer No:
IPA80R310CEXKSA2
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPA80R310CEXKSA2 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 800V 16.7A TO220-FP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:16.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:310mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:3.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:91 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2320 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):35W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-FP
Package / Case:TO-220-3 Full Pack
0 Remaining View Similar

In Stock

$4.14
24

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPA80R310CEXKSA2 IPA80R310CEXKSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Discontinued at Digi-Key
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 16.7A (Tc) 6.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V -
Rds On (Max) @ Id, Vgs 310mOhm @ 11A, 10V 310mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 3.9V @ 1mA 3.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 91 nC @ 10 V 91 nC @ 10 V
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 2320 pF @ 100 V 2320 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 35W (Tc) 35W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO220-FP PG-TO220-FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack

Related Product By Categories

CPH3341-TL-E
CPH3341-TL-E
onsemi
MOSFET P-CH 30V 5A 3CPH
BUZ101L
BUZ101L
Infineon Technologies
N-CHANNEL POWER MOSFET
TPIC5621LDW
TPIC5621LDW
Texas Instruments
N-CHANNEL POWER MOSFET
PJA3433_R1_00001
PJA3433_R1_00001
Panjit International Inc.
SOT-23, MOSFET
SIR800DP-T1-GE3
SIR800DP-T1-GE3
Vishay Siliconix
MOSFET N-CH 20V 50A PPAK SO-8
IRF1405STRLPBF
IRF1405STRLPBF
Infineon Technologies
MOSFET N-CH 55V 131A D2PAK
FCHD125N65S3R0-F155
FCHD125N65S3R0-F155
onsemi
MOSFET N-CH 650V 24A TO247
IPD65R660CFDAATMA1
IPD65R660CFDAATMA1
Infineon Technologies
MOSFET N-CH 650V 6A TO252-3
IPB60R070CFD7ATMA1
IPB60R070CFD7ATMA1
Infineon Technologies
MOSFET N-CH 650V 31A TO263-3-2
AOT480L
AOT480L
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 80V 15A/180A TO220
IPD90N06S407ATMA1
IPD90N06S407ATMA1
Infineon Technologies
MOSFET N-CH 60V 90A TO252-3
NVATS68301PZT4G
NVATS68301PZT4G
onsemi
MOSFET P-CHANNEL 100V 31A DPAK

Related Product By Brand

KITA2GTC3975VTFTTOBO1
KITA2GTC3975VTFTTOBO1
Infineon Technologies
KIT_A2G_TC397_5V_TFT
PTF141501E V1
PTF141501E V1
Infineon Technologies
IC FET RF LDMOS 150W H-30260-2
IPT60R022S7XTMA1
IPT60R022S7XTMA1
Infineon Technologies
MOSFET N-CH 600V 23A 8HSOF
IRL3202PBF
IRL3202PBF
Infineon Technologies
MOSFET N-CH 20V 48A TO220AB
SPP06N60C3HKSA1
SPP06N60C3HKSA1
Infineon Technologies
MOSFET N-CH 650V 6.2A TO220-3
63-9019
63-9019
Infineon Technologies
IGBT CHIP
IPS1031SPBF
IPS1031SPBF
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 D2PAK
BTS50090-1TMA
BTS50090-1TMA
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 TO220-7
KP214N2611
KP214N2611
Infineon Technologies
KP214 - XENSIV ABSOLUTE PRESSURE
CY8C4024FNI-S402T
CY8C4024FNI-S402T
Infineon Technologies
IC MCU 32BIT 16KB FLASH 25WLCSP
MB90214PF-GT-312-BND-AE1
MB90214PF-GT-312-BND-AE1
Infineon Technologies
IC MCU 16BIT 64KB MROM 80PQFP
CY9AFB44NBBGL-GK9E1
CY9AFB44NBBGL-GK9E1
Infineon Technologies
IC MCU 32BIT 288KB FLASH 112BGA