IPA80R310CEXKSA1
  • Share:

Infineon Technologies IPA80R310CEXKSA1

Manufacturer No:
IPA80R310CEXKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPA80R310CEXKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 800V 6.8A TO220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:6.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:310mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:3.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:91 nC @ 10 V
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:2320 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):35W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-FP
Package / Case:TO-220-3 Full Pack
0 Remaining View Similar

In Stock

-
102

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPA80R310CEXKSA1 IPA80R310CEXKSA2  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Discontinued at Digi-Key Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 6.8A (Tc) 16.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 10V
Rds On (Max) @ Id, Vgs 310mOhm @ 11A, 10V 310mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 3.9V @ 1mA 3.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 91 nC @ 10 V 91 nC @ 10 V
Vgs (Max) - ±20V
Input Capacitance (Ciss) (Max) @ Vds 2320 pF @ 100 V 2320 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 35W (Tc) 35W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO220-FP PG-TO220-FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack

Related Product By Categories

SCT20N120AG
SCT20N120AG
STMicroelectronics
SICFET N-CH 1200V 20A HIP247
FDMC6686P
FDMC6686P
onsemi
MOSFET P-CH 20V 18A/56A 8PQFN
SI7850ADP-T1-GE3
SI7850ADP-T1-GE3
Vishay Siliconix
MOSFET N-CH 60V 10.3A/12A PPAK
IXFN140N20P
IXFN140N20P
IXYS
MOSFET N-CH 200V 115A SOT227B
TK290P60Y,RQ
TK290P60Y,RQ
Toshiba Semiconductor and Storage
MOSFET N-CH 600V 11.5A DPAK
DMT35M7LFV-13
DMT35M7LFV-13
Diodes Incorporated
MOSFET N-CH 30V 76A POWERDI3333
NVMFS6H824NWFT1G
NVMFS6H824NWFT1G
onsemi
MOSFET N-CH 80V 19A/103A 5DFN
PSMNR90-40SSHJ
PSMNR90-40SSHJ
Nexperia USA Inc.
MOSFET N-CH 40V 375A LFPAK88
IPB019N08N5ATMA1
IPB019N08N5ATMA1
Infineon Technologies
DIFFERENTIATED MOSFETS
BSS126 E6327
BSS126 E6327
Infineon Technologies
MOSFET N-CH 600V 21MA SOT23-3
AON6756
AON6756
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 30V 47A/36A 8DFN
BUK9Y7R8-80E,115
BUK9Y7R8-80E,115
NXP USA Inc.
MOSFET N-CH 80V LFPAK56 PWR-SO8

Related Product By Brand

BCR555E6433
BCR555E6433
Infineon Technologies
BIPOLAR DIGITAL TRANSISTOR
IPB60R520CPATMA1
IPB60R520CPATMA1
Infineon Technologies
MOSFET N-CH 600V 6.8A D2PAK
TLE4275G
TLE4275G
Infineon Technologies
FIXED POSITIVE LDO REGULATOR
TLE4274DV50NTMA1
TLE4274DV50NTMA1
Infineon Technologies
IC REG LINEAR 5V 400MA TO252-3
CY2544QC013
CY2544QC013
Infineon Technologies
PREMIS SSCG EMI REDUCTION
CY91F524FHCPMC-GSE1
CY91F524FHCPMC-GSE1
Infineon Technologies
IC MCU 32BIT 576KB FLASH 100LQFP
MB90598GPF-G-196-JNE1
MB90598GPF-G-196-JNE1
Infineon Technologies
IC MCU 16BIT 128KB MROM 100QFP
CY7C1418AV18-250BZC
CY7C1418AV18-250BZC
Infineon Technologies
IC SRAM 36MBIT PARALLEL 165FBGA
CY7C1011G30-10BAJXET
CY7C1011G30-10BAJXET
Infineon Technologies
IC SRAM 2MBIT PARALLEL 48FBGA
S25FS512SAGNFV011
S25FS512SAGNFV011
Infineon Technologies
IC FLASH 512MBIT SPI/QUAD 8WSON
CY7C1370D-167AXC
CY7C1370D-167AXC
Infineon Technologies
IC SRAM 18MBIT PARALLEL 100TQFP
STK17T88-RF25I
STK17T88-RF25I
Infineon Technologies
IC NVSRAM 256KBIT PAR 48SSOP