IPA80R310CEXKSA1
  • Share:

Infineon Technologies IPA80R310CEXKSA1

Manufacturer No:
IPA80R310CEXKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPA80R310CEXKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 800V 6.8A TO220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:6.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:310mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:3.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:91 nC @ 10 V
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:2320 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):35W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-FP
Package / Case:TO-220-3 Full Pack
0 Remaining View Similar

In Stock

-
102

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPA80R310CEXKSA1 IPA80R310CEXKSA2  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Discontinued at Digi-Key Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 6.8A (Tc) 16.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 10V
Rds On (Max) @ Id, Vgs 310mOhm @ 11A, 10V 310mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 3.9V @ 1mA 3.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 91 nC @ 10 V 91 nC @ 10 V
Vgs (Max) - ±20V
Input Capacitance (Ciss) (Max) @ Vds 2320 pF @ 100 V 2320 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 35W (Tc) 35W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO220-FP PG-TO220-FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack

Related Product By Categories

IPD60R180P7ATMA1
IPD60R180P7ATMA1
Infineon Technologies
MOSFET N-CH 650V 18A TO252-3
TP65H070LSG-TR
TP65H070LSG-TR
Transphorm
GANFET N-CH 650V 25A PQFN88
BSZ096N10LS5ATMA1
BSZ096N10LS5ATMA1
Infineon Technologies
MOSFET N-CH 100V 40A TSDSON
CSD17559Q5T
CSD17559Q5T
Texas Instruments
MOSFET N-CH 30V 100A 8VSON
SQD30N05-20L_GE3
SQD30N05-20L_GE3
Vishay Siliconix
MOSFET N-CH 55V 30A TO252AA
STP16N65M5
STP16N65M5
STMicroelectronics
MOSFET N-CH 650V 12A TO220-3
SIHP38N60E-GE3
SIHP38N60E-GE3
Vishay Siliconix
MOSFET N-CH 600V 43A TO220AB
IPU95R2K0P7AKMA1
IPU95R2K0P7AKMA1
Infineon Technologies
MOSFET N-CH 950V 4A TO251-3
DMG301NU-7
DMG301NU-7
Diodes Incorporated
MOSFET N-CH 25V 260MA SOT23
DMN10H170SVT-13
DMN10H170SVT-13
Diodes Incorporated
MOSFET N-CH 100V 2.6A TSOT26
2N7002KW-F2-0000HF
2N7002KW-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
N-CH MOSFET 60V 0.34A SOT-323
ZVNL120CSTOB
ZVNL120CSTOB
Diodes Incorporated
MOSFET N-CH 200V 180MA E-LINE

Related Product By Brand

T3800N16TOFVTXPSA1
T3800N16TOFVTXPSA1
Infineon Technologies
STD THYR/DIODEN DISC BG-T11126K-
BCW60FE6327
BCW60FE6327
Infineon Technologies
SMALL SIGNAL BIPOLAR TRANSISTOR
BSP50E6327HTSA1
BSP50E6327HTSA1
Infineon Technologies
TRANS NPN DARL 45V 1A SOT-223
IRF7807VD1TR
IRF7807VD1TR
Infineon Technologies
MOSFET N-CH 30V 8.3A 8SO
IPP100N06S3L-04
IPP100N06S3L-04
Infineon Technologies
MOSFET N-CH 55V 100A TO220-3
TLE9351VSJXTMA1
TLE9351VSJXTMA1
Infineon Technologies
IN VEHICLE NETWORK ICS, PG-DSO-8
PEB2054NV1.0-EPIC
PEB2054NV1.0-EPIC
Infineon Technologies
TIME SLOT ASSIGNER
BTS426L1E3062ABUMA1
BTS426L1E3062ABUMA1
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 TO263-5
CY28517ZXCT
CY28517ZXCT
Infineon Technologies
IC PCI EXPRESS CLK GEN 28-TSSOP
CY96F623RBPMC1-GS-UJE2
CY96F623RBPMC1-GS-UJE2
Infineon Technologies
IC MCU 16BIT 96KB FLASH 64LQFP
MB90224PF-GT-370E1
MB90224PF-GT-370E1
Infineon Technologies
IC MCU 16BIT 96KB MROM 120PQFP
CY62146GN30-45BVXIT
CY62146GN30-45BVXIT
Infineon Technologies
IC SRAM 4MBIT PARALLEL 48VFBGA