Infineon Technologies-IPA80R310CE - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	800 V
Current - Continuous Drain (Id) @ 25°C:	16.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	310mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:	3.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	91 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	2320 pF @ 100 V
FET Feature:	-
Power Dissipation (Max):	35W (Tc)
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	PG-TO220 Full Pack
Package / Case:	TO-220-3 Full Pack

Infineon Technologies IPA80R310CE