IPA80R1K4CEXKSA2
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Infineon Technologies IPA80R1K4CEXKSA2

Manufacturer No:
IPA80R1K4CEXKSA2
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
IPA80R1K4CEXKSA2 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 800V 3.9A TO220
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:3.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.4Ohm @ 2.3A, 10V
Vgs(th) (Max) @ Id:3.9V @ 240µA
Gate Charge (Qg) (Max) @ Vgs:23 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:570 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):31W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-FP
Package / Case:TO-220-3 Full Pack
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Similar Products

Part Number IPA80R1K4CEXKSA2 IPA80R1K0CEXKSA2   IPA80R1K4CEXKSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Discontinued at Digi-Key
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 3.9A (Tc) 5.7A (Tc) 2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.4Ohm @ 2.3A, 10V 950mOhm @ 3.6A, 10V 1.4Ohm @ 2.3A, 10V
Vgs(th) (Max) @ Id 3.9V @ 240µA 3.9V @ 250µA 3.9V @ 240µA
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V 31 nC @ 10 V 23 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 570 pF @ 100 V 785 pF @ 100 V 570 pF @ 100 V
FET Feature - - -
Power Dissipation (Max) 31W (Tc) 32W (Tc) 31W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package PG-TO220-FP PG-TO220-FP PG-TO220-FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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