IPA70R750P7SXKSA1
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Infineon Technologies IPA70R750P7SXKSA1

Manufacturer No:
IPA70R750P7SXKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPA70R750P7SXKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 700V 6.5A TO220
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):700 V
Current - Continuous Drain (Id) @ 25°C:6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:750mOhm @ 1.4A, 10V
Vgs(th) (Max) @ Id:3.5V @ 70µA
Gate Charge (Qg) (Max) @ Vgs:8.3 nC @ 400 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:306 pF @ 400 V
FET Feature:- 
Power Dissipation (Max):21.2W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-FP
Package / Case:TO-220-3 Full Pack
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Similar Products

Part Number IPA70R750P7SXKSA1 IPAN70R750P7SXKSA1   IPA70R450P7SXKSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 700 V 700 V 700 V
Current - Continuous Drain (Id) @ 25°C 6.5A (Tc) 6.5A (Tc) 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 750mOhm @ 1.4A, 10V 750mOhm @ 1.4A, 10V 450mOhm @ 2.3A, 10V
Vgs(th) (Max) @ Id 3.5V @ 70µA 3.5V @ 70µA 3.5V @ 120µA
Gate Charge (Qg) (Max) @ Vgs 8.3 nC @ 400 V 8.3 nC @ 10 V 13.1 nC @ 400 V
Vgs (Max) ±16V ±16V ±16V
Input Capacitance (Ciss) (Max) @ Vds 306 pF @ 400 V 306 pF @ 400 V 424 pF @ 400 V
FET Feature - - -
Power Dissipation (Max) 21.2W (Tc) 20.8W (Tc) 22.7W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package PG-TO220-FP PG-TO220-FP PG-TO220-FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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