IPA65R600E6XKSA1
  • Share:

Infineon Technologies IPA65R600E6XKSA1

Manufacturer No:
IPA65R600E6XKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPA65R600E6XKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 650V 7.3A TO220-FP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:600mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id:3.5V @ 210µA
Gate Charge (Qg) (Max) @ Vgs:23 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:440 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):28W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-FP
Package / Case:TO-220-3 Full Pack
0 Remaining View Similar

In Stock

$2.24
322

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPA65R600E6XKSA1 IPA60R600E6XKSA1   IPA65R600C6XKSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Not For New Designs Not For New Designs Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 600 V 650 V
Current - Continuous Drain (Id) @ 25°C 7.3A (Tc) 7.3A (Tc) 7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 600mOhm @ 2.1A, 10V 600mOhm @ 2.4A, 10V 600mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id 3.5V @ 210µA 3.5V @ 200µA 3.5V @ 210µA
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V 20.5 nC @ 10 V 23 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 440 pF @ 100 V 440 pF @ 100 V 440 pF @ 100 V
FET Feature - - -
Power Dissipation (Max) 28W (Tc) 28W (Tc) 28W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package PG-TO220-FP PG-TO220-FP PG-TO220-3-111
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

Related Product By Categories

FQP2N40-F080
FQP2N40-F080
onsemi
MOSFET N-CH 400V 1.8A TO220-3
IPB60R099CPATMA1
IPB60R099CPATMA1
Infineon Technologies
MOSFET N-CH 600V 31A TO263-3
IXTH110N25T
IXTH110N25T
IXYS
MOSFET N-CH 250V 110A TO247
SQ3418AEEV-T1_BE3
SQ3418AEEV-T1_BE3
Vishay Siliconix
MOSFET N-CH 40V 8A 6TSOP
RJK0330DPB-01#J0
RJK0330DPB-01#J0
Renesas Electronics America Inc
MOSFET N-CH 30V 45A LFPAK
TSM4NB60CH X0G
TSM4NB60CH X0G
Taiwan Semiconductor Corporation
MOSFET N-CHANNEL 600V 4A TO251
IPA65R660CFDXKSA1
IPA65R660CFDXKSA1
Infineon Technologies
MOSFET N-CH 650V 6A TO220
IXTH52N65X
IXTH52N65X
IXYS
MOSFET N-CH 650V 52A TO247
IRFU120
IRFU120
Vishay Siliconix
MOSFET N-CH 100V 7.7A TO251AA
IRL3715ZSTRLPBF
IRL3715ZSTRLPBF
Infineon Technologies
MOSFET N-CH 20V 50A D2PAK
IPD64CN10N G
IPD64CN10N G
Infineon Technologies
MOSFET N-CH 100V 17A TO252-3
NTMFS4C05NT3G
NTMFS4C05NT3G
onsemi
MOSFET N-CH 30V 11.9A 5DFN

Related Product By Brand

BSC190N15NS3GATMA1
BSC190N15NS3GATMA1
Infineon Technologies
MOSFET N-CH 150V 50A TDSON-8-1
SPU09P06PL
SPU09P06PL
Infineon Technologies
MOSFET P-CH 60V 9.7A TO251-3
BSC032N03SG
BSC032N03SG
Infineon Technologies
MOSFET N-CH 30V 23A/100A TDSON
IPU60R2K0C6AKMA1
IPU60R2K0C6AKMA1
Infineon Technologies
MOSFET N-CH 600V 2.4A TO251-3
IGP06N60TXKSA1
IGP06N60TXKSA1
Infineon Technologies
IGBT TRENCH/FS 600V 12A TO220-3
IR3519MTRPBF
IR3519MTRPBF
Infineon Technologies
IC GATE DRVR HALF-BRIDGE 8MLP
TLE7183FXUMA7
TLE7183FXUMA7
Infineon Technologies
IC MOTOR DRIVER 5.5V-20V 48VQFN
TLE4269GMXUMA2
TLE4269GMXUMA2
Infineon Technologies
IC REG LINEAR 5V 150MA DSO14-61
TDA 6192V
TDA 6192V
Infineon Technologies
IC RF AMP GP 30MHZ-65MHZ 20VQFN
CY29352AXIT
CY29352AXIT
Infineon Technologies
IC CLK ZDB 11OUT 200MHZ 32LQFP
CY22381SXC-212T
CY22381SXC-212T
Infineon Technologies
IC CLOCK GENERATOR
CY6264-70SNXAT
CY6264-70SNXAT
Infineon Technologies
IC SRAM 64KBIT PARALLEL 28SOIC