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| Part Number | IPA65R190C7XKSA1 | IPA65R190C6XKSA1 |
|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Status | Active | Obsolete |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) | 20.2A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 5.7A, 10V | 190mOhm @ 7.3A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 290µA | 3.5V @ 730µA |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V | 73 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1150 pF @ 400 V | 1620 pF @ 100 V |
| FET Feature | - | - |
| Power Dissipation (Max) | 30W (Tc) | 34W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Through Hole |
| Supplier Device Package | PG-TO220-FP | PG-TO220-3-111 |
| Package / Case | TO-220-3 Full Pack | TO-220-3 Full Pack |
