IPA65R095C7XKSA1
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Infineon Technologies IPA65R095C7XKSA1

Manufacturer No:
IPA65R095C7XKSA1
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
IPA65R095C7XKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 650V 12A TO220-FP
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:95mOhm @ 11.8A, 10V
Vgs(th) (Max) @ Id:4V @ 590µA
Gate Charge (Qg) (Max) @ Vgs:45 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2140 pF @ 400 V
FET Feature:- 
Power Dissipation (Max):34W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-FP
Package / Case:TO-220-3 Full Pack
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Similar Products

Part Number IPA65R095C7XKSA1 IPA65R045C7XKSA1   IPA65R065C7XKSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc) 18A (Tc) 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 95mOhm @ 11.8A, 10V 45mOhm @ 24.9A, 10V 65mOhm @ 17.1A, 10V
Vgs(th) (Max) @ Id 4V @ 590µA 4V @ 1.25mA 4V @ 850µA
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V 93 nC @ 10 V 64 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2140 pF @ 400 V 4340 pF @ 400 V 3020 pF @ 400 V
FET Feature - - -
Power Dissipation (Max) 34W (Tc) 35W (Tc) 34W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package PG-TO220-FP PG-TO220-FP PG-TO220-FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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