IPA60R280P6XKSA1
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Infineon Technologies IPA60R280P6XKSA1

Manufacturer No:
IPA60R280P6XKSA1
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
IPA60R280P6XKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 13.8A TO220-FP
Delivery:
Payment:
iso14001
iso45001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:13.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:280mOhm @ 5.2A, 10V
Vgs(th) (Max) @ Id:4.5V @ 430µA
Gate Charge (Qg) (Max) @ Vgs:25.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1190 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):32W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-FP
Package / Case:TO-220-3 Full Pack
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Similar Products

Part Number IPA60R280P6XKSA1 IPA60R280P7XKSA1   IPA60R380P6XKSA1   IPA60R230P6XKSA1   IPA60R280C6XKSA1   IPA60R280E6XKSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active Not For New Designs Not For New Designs
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 13.8A (Tc) 12A (Tc) 10.6A (Tc) 16.8A (Tc) 13.8A (Tc) 13.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 280mOhm @ 5.2A, 10V 280mOhm @ 3.8A, 10V 380mOhm @ 3.8A, 10V 230mOhm @ 6.4A, 10V 280mOhm @ 6.5A, 10V 280mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 430µA 4V @ 190µA 4.5V @ 320µA 4.5V @ 530µA 3.5V @ 430µA 3.5V @ 430µA
Gate Charge (Qg) (Max) @ Vgs 25.5 nC @ 10 V 18 nC @ 10 V 19 nC @ 10 V 31 nC @ 10 V 43 nC @ 10 V 43 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1190 pF @ 100 V 761 pF @ 400 V 877 pF @ 100 V 1450 pF @ 100 V 950 pF @ 100 V 950 pF @ 100 V
FET Feature - - - - - -
Power Dissipation (Max) 32W (Tc) 24W (Tc) 31W (Tc) 33W (Tc) 32W (Tc) 32W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package PG-TO220-FP PG-TO220-FP PG-TO220-FP PG-TO220-FP PG-TO220-FP PG-TO220-FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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