IPA60R280CFD7XKSA1
  • Share:

Infineon Technologies IPA60R280CFD7XKSA1

Manufacturer No:
IPA60R280CFD7XKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPA60R280CFD7XKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 650V 6A TO220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:280mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id:4.5V @ 180µA
Gate Charge (Qg) (Max) @ Vgs:18 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:807 pF @ 400 V
FET Feature:- 
Power Dissipation (Max):24W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-FP
Package / Case:TO-220-3 Full Pack
0 Remaining View Similar

In Stock

$3.32
299

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPA60R280CFD7XKSA1 IPA60R210CFD7XKSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 650 V -
Current - Continuous Drain (Id) @ 25°C 6A (Tc) 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V -
Rds On (Max) @ Id, Vgs 280mOhm @ 3.6A, 10V -
Vgs(th) (Max) @ Id 4.5V @ 180µA -
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 10 V -
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 807 pF @ 400 V -
FET Feature - -
Power Dissipation (Max) 24W (Tc) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Through Hole -
Supplier Device Package PG-TO220-FP -
Package / Case TO-220-3 Full Pack -

Related Product By Categories

IRLS540A
IRLS540A
Fairchild Semiconductor
N-CHANNEL POWER MOSFET
ZXMN10A09KTC
ZXMN10A09KTC
Diodes Incorporated
MOSFET N-CH 100V 5A TO252-3
FDMC4435BZ
FDMC4435BZ
onsemi
MOSFET P-CH 30V 8.5A/18A 8MLP
STL7N6LF3
STL7N6LF3
STMicroelectronics
MOSFET N-CH 60V 20A POWERFLAT
DMP4006SPSW-13
DMP4006SPSW-13
Diodes Incorporated
MOSFET BVDSS: 41V~60V POWERDI506
IPD100N04S4L02ATMA1
IPD100N04S4L02ATMA1
Infineon Technologies
MOSFET N-CHANNEL_30/40V
STP20N20
STP20N20
STMicroelectronics
MOSFET N-CH 200V 18A TO220AB
IXFP12N50PM
IXFP12N50PM
IXYS
MOSFET N-CH 500V 6A TO220AB
IXFQ14N80P
IXFQ14N80P
IXYS
MOSFET N-CH 800V 14A TO3P
SSM4K27CTTPL3
SSM4K27CTTPL3
Toshiba Semiconductor and Storage
MOSFET N-CH 20V 500MA CST4
AON6413
AON6413
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 22A/32A 8DFN
AO4485_102
AO4485_102
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 40V 10A 8SO

Related Product By Brand

DD260N18KHPSA1
DD260N18KHPSA1
Infineon Technologies
DIODE MODULE GP 1800V 260A
D3001N60T
D3001N60T
Infineon Technologies
DIODE GEN PURP 6KV 3910A
BSZ240N12NS3GATMA1
BSZ240N12NS3GATMA1
Infineon Technologies
MOSFET N-CH 120V 37A 8TSDSON
IRL1004
IRL1004
Infineon Technologies
MOSFET N-CH 40V 130A TO220AB
IRL3303STRRPBF
IRL3303STRRPBF
Infineon Technologies
MOSFET N-CH 30V 38A D2PAK
IRFR3504TRPBF
IRFR3504TRPBF
Infineon Technologies
MOSFET N-CH 40V 30A DPAK
AUIRF2804L-313
AUIRF2804L-313
Infineon Technologies
MOSFET N-CH 40V 195A TO262
CY8C3444LTI-109
CY8C3444LTI-109
Infineon Technologies
IC MCU 8BIT 16KB FLASH 48QFN
CY91F526KJCPMC1-GS-F4E1
CY91F526KJCPMC1-GS-F4E1
Infineon Technologies
IC MCU 32B 1.0625MB FLSH 144LQFP
S25FL512SAGMFIR10
S25FL512SAGMFIR10
Infineon Technologies
IC FLASH 512MBIT SPI/QUAD 16SOIC
S25FL128LDPMFB000
S25FL128LDPMFB000
Infineon Technologies
IC FLASH 128MBIT SPI/QUAD 16SOIC
STK14C88-NF35
STK14C88-NF35
Infineon Technologies
IC NVSRAM 256KBIT PAR 32SOIC