IPA60R280C6XKSA1
  • Share:

Infineon Technologies IPA60R280C6XKSA1

Manufacturer No:
IPA60R280C6XKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPA60R280C6XKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 13.8A TO220-FP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:13.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:280mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id:3.5V @ 430µA
Gate Charge (Qg) (Max) @ Vgs:43 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:950 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):32W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-FP
Package / Case:TO-220-3 Full Pack
0 Remaining View Similar

In Stock

$2.00
147

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPA60R280C6XKSA1 IPA60R380C6XKSA1   IPA60R280P6XKSA1   IPA60R280E6XKSA1   IPA65R280C6XKSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Not For New Designs Not For New Designs Active Not For New Designs Not For New Designs
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 650 V
Current - Continuous Drain (Id) @ 25°C 13.8A (Tc) 10.6A (Tc) 13.8A (Tc) 13.8A (Tc) 13.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 280mOhm @ 6.5A, 10V 380mOhm @ 3.8A, 10V 280mOhm @ 5.2A, 10V 280mOhm @ 6.5A, 10V 280mOhm @ 4.4A, 10V
Vgs(th) (Max) @ Id 3.5V @ 430µA 3.5V @ 320µA 4.5V @ 430µA 3.5V @ 430µA 3.5V @ 440µA
Gate Charge (Qg) (Max) @ Vgs 43 nC @ 10 V 32 nC @ 10 V 25.5 nC @ 10 V 43 nC @ 10 V 45 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 950 pF @ 100 V 700 pF @ 100 V 1190 pF @ 100 V 950 pF @ 100 V 950 pF @ 100 V
FET Feature - - - - -
Power Dissipation (Max) 32W (Tc) 31W (Tc) 32W (Tc) 32W (Tc) 32W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package PG-TO220-FP PG-TO220-FP PG-TO220-FP PG-TO220-FP PG-TO220-3-111
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

Related Product By Categories

AUIRFR5410TRL
AUIRFR5410TRL
Infineon Technologies
MOSFET P-CH 100V 13A DPAK
SSM3K2615TU,LF
SSM3K2615TU,LF
Toshiba Semiconductor and Storage
MOSFET N-CH 60V 2A UFM
FDS6688
FDS6688
Fairchild Semiconductor
MOSFET N-CH 30V 16A 8SOIC
ZXMN7A11GTA
ZXMN7A11GTA
Diodes Incorporated
MOSFET N-CH 70V 2.7A SOT223
PSMN7R6-100BSEJ
PSMN7R6-100BSEJ
Nexperia USA Inc.
MOSFET N-CH 100V 75A D2PAK
AOB2500L
AOB2500L
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 150V 11.5/152A TO263
FDMS4D5N08LC
FDMS4D5N08LC
onsemi
MOSFET N-CH 80V 17A/116A 8PQFN
STP10NM60N
STP10NM60N
STMicroelectronics
MOSFET N-CH 600V 10A TO220AB
MTB3N60E
MTB3N60E
onsemi
N-CHANNEL POWER MOSFET
FCU7N60TU
FCU7N60TU
Fairchild Semiconductor
MOSFET N-CH 600V 7A IPAK
IXFR10N100Q
IXFR10N100Q
IXYS
MOSFET N-CH 1000V 9A ISOPLUS247
IXTR30N25
IXTR30N25
IXYS
MOSFET N-CH 250V 25A ISOPLUS247

Related Product By Brand

PTFA240451E V1 R250
PTFA240451E V1 R250
Infineon Technologies
IC FET RF LDMOS 45W H-30265-2
IPBE65R050CFD7AATMA1
IPBE65R050CFD7AATMA1
Infineon Technologies
MOSFET N-CH 650V 45A TO263-7
IRF8721TRPBF-1
IRF8721TRPBF-1
Infineon Technologies
MOSFET N-CH 30V 14A 8SO
IKW25N120H3FKSA1
IKW25N120H3FKSA1
Infineon Technologies
IGBT 1200V 50A 326W TO247-3
IRG4IBC30KDPBF-INF
IRG4IBC30KDPBF-INF
Infineon Technologies
COPACK IGBT W/ULTRAFAST SOFT REC
ICE3A5565PBKSA1
ICE3A5565PBKSA1
Infineon Technologies
IC OFFLINE SW FLYBACK TO220-6
IRS2308SPBF
IRS2308SPBF
Infineon Technologies
IC GATE DRVR HALF-BRIDGE 8SOIC
BTS5012SDA
BTS5012SDA
Infineon Technologies
BTS5012 - PROFET - SMART HIGH SI
MB9BF329TBGL-GE1
MB9BF329TBGL-GE1
Infineon Technologies
IC MCU 32B 1.5625MB FLSH 192FBGA
MB90F022CPF-GS-9192
MB90F022CPF-GS-9192
Infineon Technologies
IC MCU MICOM FLASH 100QFP
S25FS128SDSBHV200
S25FS128SDSBHV200
Infineon Technologies
IC FLASH 128MBIT SPI/QUAD 24BGA
S34MS04G200BHV000
S34MS04G200BHV000
Infineon Technologies
IC FLASH 4GBIT PARALLEL 63BGA