IPA60R1K0CEXKSA1
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Infineon Technologies IPA60R1K0CEXKSA1

Manufacturer No:
IPA60R1K0CEXKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPA60R1K0CEXKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 6.8A TO220
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:6.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id:3.5V @ 130µA
Gate Charge (Qg) (Max) @ Vgs:13 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:280 pF @ 100 V
FET Feature:Super Junction
Power Dissipation (Max):26W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-FP
Package / Case:TO-220-3 Full Pack
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Similar Products

Part Number IPA60R1K0CEXKSA1 IPA65R1K0CEXKSA1   IPA80R1K0CEXKSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Discontinued at Digi-Key
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 650 V 800 V
Current - Continuous Drain (Id) @ 25°C 6.8A (Tc) 7.2A (Tc) 3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 1Ohm @ 1.5A, 10V 1Ohm @ 1.5A, 10V 950mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id 3.5V @ 130µA 3.5V @ 200µA 3.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V 15.3 nC @ 10 V 31 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 280 pF @ 100 V 328 pF @ 100 V 785 pF @ 100 V
FET Feature Super Junction Super Junction -
Power Dissipation (Max) 26W (Tc) 68W (Tc) 32W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package PG-TO220-FP PG-TO220-FP PG-TO220-FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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