IPA60R180P7XKSA1
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Infineon Technologies IPA60R180P7XKSA1

Manufacturer No:
IPA60R180P7XKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPA60R180P7XKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CHANNEL 650V 18A TO220
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:180mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id:4V @ 280µA
Gate Charge (Qg) (Max) @ Vgs:25 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1081 pF @ 400 V
FET Feature:- 
Power Dissipation (Max):26W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220 Full Pack
Package / Case:TO-220-3 Full Pack
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$3.24
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Similar Products

Part Number IPA60R180P7XKSA1 IPA60R280P7XKSA1   IPA60R080P7XKSA1   IPA60R120P7XKSA1   IPA60R160P7XKSA1   IPA60R180C7XKSA1   IPA60R180P7SXKSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 600 V 600 V 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc) 12A (Tc) 37A (Tc) 26A (Tc) 20A (Tc) 9A (Tc) 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 180mOhm @ 5.6A, 10V 280mOhm @ 3.8A, 10V 80mOhm @ 11.8A, 10V 120mOhm @ 8.2A, 10V 160mOhm @ 6.3A, 10V 180mOhm @ 5.3A, 10V 180mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id 4V @ 280µA 4V @ 190µA 4V @ 590µA 4V @ 410µA 4V @ 350µA 4V @ 260µA 4V @ 280µA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V 18 nC @ 10 V 51 nC @ 10 V 36 nC @ 10 V 31 nC @ 10 V 24 nC @ 10 V 25 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1081 pF @ 400 V 761 pF @ 400 V 2180 pF @ 400 V 1544 pF @ 400 V 1317 pF @ 400 V 1080 pF @ 400 V 1081 pF @ 400 V
FET Feature - - - - - - -
Power Dissipation (Max) 26W (Tc) 24W (Tc) 29W (Tc) 28W (Tc) 26W (Tc) 29W (Tc) 26W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package PG-TO220 Full Pack PG-TO220-FP PG-TO220-FP PG-TO220 Full Pack PG-TO220 Full Pack PG-TO220 Full Pack PG-TO220-FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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