IPA60R125CFD7XKSA1
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Infineon Technologies IPA60R125CFD7XKSA1

Manufacturer No:
IPA60R125CFD7XKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPA60R125CFD7XKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 11A TO220
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:11A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:125mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id:4.5V @ 390µA
Gate Charge (Qg) (Max) @ Vgs:36 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1503 pF @ 400 V
FET Feature:- 
Power Dissipation (Max):32W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220 Full Pack
Package / Case:TO-220-3 Full Pack
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In Stock

$5.75
175

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Similar Products

Part Number IPA60R125CFD7XKSA1 IPA60R145CFD7XKSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 600 V -
Current - Continuous Drain (Id) @ 25°C 11A (Tc) 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V -
Rds On (Max) @ Id, Vgs 125mOhm @ 7.8A, 10V -
Vgs(th) (Max) @ Id 4.5V @ 390µA -
Gate Charge (Qg) (Max) @ Vgs 36 nC @ 10 V -
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 1503 pF @ 400 V -
FET Feature - -
Power Dissipation (Max) 32W (Tc) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Through Hole -
Supplier Device Package PG-TO220 Full Pack -
Package / Case TO-220-3 Full Pack -

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