IPA50R950CE
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Infineon Technologies IPA50R950CE

Manufacturer No:
IPA50R950CE
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
IPA50R950CE Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 500V 4.3A TO220-FP
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):13V
Rds On (Max) @ Id, Vgs:950mOhm @ 1.2A, 13V
Vgs(th) (Max) @ Id:3.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:10.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:231 pF @ 100 V
FET Feature:Super Junction
Power Dissipation (Max):25.7W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3-31
Package / Case:TO-220-3 Full Pack
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Similar Products

Part Number IPA50R950CE IPA50R650CE  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 4.3A (Tc) 6.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 13V 13V
Rds On (Max) @ Id, Vgs 950mOhm @ 1.2A, 13V 650mOhm @ 1.8A, 13V
Vgs(th) (Max) @ Id 3.5V @ 100µA 3.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 10.5 nC @ 10 V 15 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 231 pF @ 100 V 342 pF @ 100 V
FET Feature Super Junction Super Junction
Power Dissipation (Max) 25.7W (Tc) 27.2W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO220-3-31 PG-TO220-FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack

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