IPA50R500CE
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Infineon Technologies IPA50R500CE

Manufacturer No:
IPA50R500CE
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
IPA50R500CE Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 500V 7.6A TO220-FP
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:7.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):13V
Rds On (Max) @ Id, Vgs:500mOhm @ 2.3A, 13V
Vgs(th) (Max) @ Id:3.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs:18.7 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:433 pF @ 100 V
FET Feature:Super Junction
Power Dissipation (Max):28W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3-31
Package / Case:TO-220-3 Full Pack
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Similar Products

Part Number IPA50R500CE IPA50R800CE  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 7.6A (Tc) 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 13V 13V
Rds On (Max) @ Id, Vgs 500mOhm @ 2.3A, 13V 800mOhm @ 1.5A, 13V
Vgs(th) (Max) @ Id 3.5V @ 200µA 3.5V @ 130µA
Gate Charge (Qg) (Max) @ Vgs 18.7 nC @ 10 V 12.4 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 433 pF @ 100 V 280 pF @ 100 V
FET Feature Super Junction Super Junction
Power Dissipation (Max) 28W (Tc) 26.4W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO220-3-31 PG-TO220-FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack

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