IPA057N06N3GXKSA1
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Infineon Technologies IPA057N06N3GXKSA1

Manufacturer No:
IPA057N06N3GXKSA1
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
IPA057N06N3GXKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 60A TO220-3-31
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:5.7mOhm @ 60A, 10V
Vgs(th) (Max) @ Id:4V @ 58µA
Gate Charge (Qg) (Max) @ Vgs:82 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6600 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):38W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3-31
Package / Case:TO-220-3 Full Pack
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Similar Products

Part Number IPA057N06N3GXKSA1 IPA057N08N3GXKSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 80 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc) 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 6V, 10V
Rds On (Max) @ Id, Vgs 5.7mOhm @ 60A, 10V 5.7mOhm @ 60A, 10V
Vgs(th) (Max) @ Id 4V @ 58µA 3.5V @ 90µA
Gate Charge (Qg) (Max) @ Vgs 82 nC @ 10 V 69 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6600 pF @ 30 V 4750 pF @ 40 V
FET Feature - -
Power Dissipation (Max) 38W (Tc) 39W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO220-3-31 PG-TO220-FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack

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