IPA040N06NXKSA1
  • Share:

Infineon Technologies IPA040N06NXKSA1

Manufacturer No:
IPA040N06NXKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPA040N06NXKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 69A TO220-FP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:69A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:4mOhm @ 69A, 10V
Vgs(th) (Max) @ Id:3.3V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:44 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3375 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):36W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-FP
Package / Case:TO-220-3 Full Pack
0 Remaining View Similar

In Stock

$1.72
186

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPA040N06NXKSA1 IPA060N06NXKSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 69A (Tc) 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 4mOhm @ 69A, 10V 6mOhm @ 45A, 10V
Vgs(th) (Max) @ Id 3.3V @ 50µA 3.3V @ 36µA
Gate Charge (Qg) (Max) @ Vgs 44 nC @ 10 V 32 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3375 pF @ 30 V 2500 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 36W (Tc) 33W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO220-FP PG-TO220-FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack

Related Product By Categories

BSS84AK,215
BSS84AK,215
Nexperia USA Inc.
MOSFET P-CH 50V 180MA TO236AB
STF6N60M2
STF6N60M2
STMicroelectronics
MOSFET N-CH 600V 4.5A TO220FP
NVD4808NT4G
NVD4808NT4G
onsemi
NVD4808 - POWER MOSFET 30V 63A 8
FDMS86150
FDMS86150
onsemi
MOSFET N CH 100V 16A POWER56
NTMJS1D7N04CTWG
NTMJS1D7N04CTWG
onsemi
MOSFET N-CH 40V 35A/185A 8LFPAK
TK5A50D(STA4,Q,M)
TK5A50D(STA4,Q,M)
Toshiba Semiconductor and Storage
MOSFET N-CH 500V 5A TO220SIS
APT32M80J
APT32M80J
Microchip Technology
MOSFET N-CH 800V 33A ISOTOP
IRF5802TR
IRF5802TR
Infineon Technologies
MOSFET N-CH 150V 0.9A 6-TSOP
NTP22N06L
NTP22N06L
onsemi
MOSFET N-CH 60V 22A TO220AB
IPD096N08N3GBTMA1
IPD096N08N3GBTMA1
Infineon Technologies
MOSFET N-CH 80V 73A TO252-3
IPP100N06S2L05AKSA1
IPP100N06S2L05AKSA1
Infineon Technologies
MOSFET N-CH 55V 100A TO220-3
RD3L140SPTL1
RD3L140SPTL1
Rohm Semiconductor
MOSFET P-CH 60V 14A TO252

Related Product By Brand

BFR 182 B6663
BFR 182 B6663
Infineon Technologies
RF TRANS NPN 12V 8GHZ SOT23-3
IPN50R950CEATMA1
IPN50R950CEATMA1
Infineon Technologies
MOSFET N-CH 500V 6.6A SOT223
IPDD60R145CFD7XTMA1
IPDD60R145CFD7XTMA1
Infineon Technologies
MOSFET N-CH 600V 24A HDSOP-10
IRFR2905ZTR
IRFR2905ZTR
Infineon Technologies
MOSFET N-CH 55V 42A DPAK
IRLR120NPBF
IRLR120NPBF
Infineon Technologies
MOSFET N-CH 100V 10A DPAK
IRFR5305CPBF
IRFR5305CPBF
Infineon Technologies
MOSFET P-CH 55V 31A DPAK
CY36800J
CY36800J
Infineon Technologies
KIT PROGRAM INSTACLOCK JAPAN
CY8C20396A-24LQXIT
CY8C20396A-24LQXIT
Infineon Technologies
IC MCU PSOC 16K FLASH 2K 24QFN
CY8C24894-24LTXI
CY8C24894-24LTXI
Infineon Technologies
IC MCU 8BIT 16KB FLASH 56QFN
CY8C24093-24LKXI
CY8C24093-24LKXI
Infineon Technologies
IC MCU 8BIT 8KB FLASH 16QFN
S29GL01GS10FHI013
S29GL01GS10FHI013
Infineon Technologies
IC FLASH 1GBIT PARALLEL 64FBGA
STK14C88B-NF35U
STK14C88B-NF35U
Infineon Technologies
IC NVSRAM 256KBIT PAR 32SOIC