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| Part Number | IMZA65R057M1HXKSA1 | IMZA65R027M1HXKSA1 |
|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Status | Active | Active |
| FET Type | N-Channel | - |
| Technology | SiCFET (Silicon Carbide) | - |
| Drain to Source Voltage (Vdss) | 650 V | - |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) | 59A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V | - |
| Rds On (Max) @ Id, Vgs | 74mOhm @ 16.7A, 18V | - |
| Vgs(th) (Max) @ Id | 5.7V @ 5mA | - |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 18 V | - |
| Vgs (Max) | +20V, -2V | - |
| Input Capacitance (Ciss) (Max) @ Vds | 930 pF @ 400 V | - |
| FET Feature | - | - |
| Power Dissipation (Max) | 133W (Tc) | - |
| Operating Temperature | -55°C ~ 175°C (TJ) | - |
| Mounting Type | Through Hole | - |
| Supplier Device Package | PG-TO247-4-3 | - |
| Package / Case | TO-247-4 | - |
