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| Part Number | IMZA65R027M1HXKSA1 | IMZA65R057M1HXKSA1 |
|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Status | Active | Active |
| FET Type | - | N-Channel |
| Technology | - | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | - | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 59A (Tc) | 35A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - | 18V |
| Rds On (Max) @ Id, Vgs | - | 74mOhm @ 16.7A, 18V |
| Vgs(th) (Max) @ Id | - | 5.7V @ 5mA |
| Gate Charge (Qg) (Max) @ Vgs | - | 28 nC @ 18 V |
| Vgs (Max) | - | +20V, -2V |
| Input Capacitance (Ciss) (Max) @ Vds | - | 930 pF @ 400 V |
| FET Feature | - | - |
| Power Dissipation (Max) | - | 133W (Tc) |
| Operating Temperature | - | -55°C ~ 175°C (TJ) |
| Mounting Type | - | Through Hole |
| Supplier Device Package | - | PG-TO247-4-3 |
| Package / Case | - | TO-247-4 |
