Infineon Technologies-IMW65R030M1HXKSA1 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):	650 V
Current - Continuous Drain (Id) @ 25°C:	58A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	18V
Rds On (Max) @ Id, Vgs:	42mOhm @ 29.5A, 18V
Vgs(th) (Max) @ Id:	5.7V @ 8.8mA
Gate Charge (Qg) (Max) @ Vgs:	48 nC @ 18 V
Vgs (Max):	+20V, -2V
Input Capacitance (Ciss) (Max) @ Vds:	1643 pF @ 400 V
FET Feature:	-
Power Dissipation (Max):	197W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	PG-TO247-3-41
Package / Case:	TO-247-3

Infineon Technologies IMW65R030M1HXKSA1