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IMW65R027M1HXKSA1
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Infineon Technologies IMW65R027M1HXKSA1

Manufacturer No:
IMW65R027M1HXKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IMW65R027M1HXKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET 650V NCH SIC TRENCH
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:47A (Tc)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
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In Stock

$27.26
32

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