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| Part Number | IMW120R350M1HXKSA1 | IMZ120R350M1HXKSA1 |
|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Status | Active | Active |
| FET Type | N-Channel | N-Channel |
| Technology | SiCFET (Silicon Carbide) | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 4.7A (Tc) | 4.7A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V | 15V, 18V |
| Rds On (Max) @ Id, Vgs | 455mOhm @ 2A, 18V | 350mOhm @ 2A, 18V |
| Vgs(th) (Max) @ Id | 5.7V @ 1mA | 5.7V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 5.3 nC @ 18 V | 5.3 nC @ 18 V |
| Vgs (Max) | +23V, -7V | +23V, -7V |
| Input Capacitance (Ciss) (Max) @ Vds | 182 pF @ 800 V | 182 pF @ 800 V |
| FET Feature | - | - |
| Power Dissipation (Max) | 60W (Tc) | 60W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole | Through Hole |
| Supplier Device Package | PG-TO247-3-41 | PG-TO247-4-1 |
| Package / Case | TO-247-3 | TO-247-4 |
