Infineon Technologies-IMBG120R350M1HXTMA1 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):	1200 V
Current - Continuous Drain (Id) @ 25°C:	4.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	-
Rds On (Max) @ Id, Vgs:	468mOhm @ 2A, 18V
Vgs(th) (Max) @ Id:	5.7V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	5.9 nC @ 18 V
Vgs (Max):	+18V, -15V
Input Capacitance (Ciss) (Max) @ Vds:	196 pF @ 800 V
FET Feature:	Standard
Power Dissipation (Max):	65W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PG-TO263-7-12
Package / Case:	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

Infineon Technologies IMBG120R350M1HXTMA1