IMBF170R450M1XTMA1
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Infineon Technologies IMBF170R450M1XTMA1

Manufacturer No:
IMBF170R450M1XTMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IMBF170R450M1XTMA1 Datasheet
ECAD Model:
-
Description:
SICFET N-CH 1700V 9.8A TO263-7
Delivery:
Payment:
iso14001
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Product Attributes

FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):1700 V
Current - Continuous Drain (Id) @ 25°C:9.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):12V, 15V
Rds On (Max) @ Id, Vgs:450mOhm @ 2A, 15V
Vgs(th) (Max) @ Id:5.7V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs:11 nC @ 12 V
Vgs (Max):+20V, -10V
Input Capacitance (Ciss) (Max) @ Vds:610 pF @ 1000 V
FET Feature:- 
Power Dissipation (Max):107W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-7-13
Package / Case:TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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$9.86
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Similar Products

Part Number IMBF170R450M1XTMA1 IMBF170R650M1XTMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology SiCFET (Silicon Carbide) SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1700 V 1700 V
Current - Continuous Drain (Id) @ 25°C 9.8A (Tc) 7.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 12V, 15V 12V, 15V
Rds On (Max) @ Id, Vgs 450mOhm @ 2A, 15V 650mOhm @ 1.5A, 15V
Vgs(th) (Max) @ Id 5.7V @ 2.5mA 5.7V @ 1.7mA
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 12 V 8 nC @ 12 V
Vgs (Max) +20V, -10V +20V, -10V
Input Capacitance (Ciss) (Max) @ Vds 610 pF @ 1000 V 422 pF @ 1000 V
FET Feature - -
Power Dissipation (Max) 107W (Tc) 88W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO263-7-13 PG-TO263-7-13
Package / Case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

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