Infineon Technologies-IMBF170R1K0M1XTMA1 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):	1700 V
Current - Continuous Drain (Id) @ 25°C:	5.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	12V, 15V
Rds On (Max) @ Id, Vgs:	1000mOhm @ 1A, 15V
Vgs(th) (Max) @ Id:	5.7V @ 1.1mA
Gate Charge (Qg) (Max) @ Vgs:	5 nC @ 12 V
Vgs (Max):	+20V, -10V
Input Capacitance (Ciss) (Max) @ Vds:	275 pF @ 1000 V
FET Feature:	-
Power Dissipation (Max):	68W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PG-TO263-7-13
Package / Case:	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

Infineon Technologies IMBF170R1K0M1XTMA1