Infineon Technologies-IKZA50N65SS5XKSA1 - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):	650 V
Current - Collector (Ic) (Max):	80 A
Current - Collector Pulsed (Icm):	200 A
Vce(on) (Max) @ Vge, Ic:	1.7V @ 15V, 50A
Power - Max:	274 W
Switching Energy:	230µJ (on), 520µJ (off)
Input Type:	Standard
Gate Charge:	110 nC
Td (on/off) @ 25°C:	19ns/140ns
Test Condition:	400V, 50A, 9Ohm, 15V
Reverse Recovery Time (trr):	-
Operating Temperature:	-40°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-247-4
Supplier Device Package:	PG-TO247-4-3

Infineon Technologies IKZA50N65SS5XKSA1