Infineon Technologies-IKW75N65ET7XKSA1 - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):	650 V
Current - Collector (Ic) (Max):	80 A
Current - Collector Pulsed (Icm):	225 A
Vce(on) (Max) @ Vge, Ic:	1.65V @ 15V, 75A
Power - Max:	333 W
Switching Energy:	2.17mJ (on), 1.23mJ (off)
Input Type:	Standard
Gate Charge:	435 nC
Td (on/off) @ 25°C:	28ns/310ns
Test Condition:	400V, 75A, 4.7Ohm, 15V
Reverse Recovery Time (trr):	100 ns
Operating Temperature:	-40°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-247-3
Supplier Device Package:	PG-TO247-3

Infineon Technologies IKW75N65ET7XKSA1