IKW30N65ES5XKSA1
  • Share:

Infineon Technologies IKW30N65ES5XKSA1

Manufacturer No:
IKW30N65ES5XKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IKW30N65ES5XKSA1 Datasheet
ECAD Model:
-
Description:
IGBT TRENCH 650V 62A TO247-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

IGBT Type:Trench
Voltage - Collector Emitter Breakdown (Max):650 V
Current - Collector (Ic) (Max):62 A
Current - Collector Pulsed (Icm):120 A
Vce(on) (Max) @ Vge, Ic:1.7V @ 15V, 30A
Power - Max:188 W
Switching Energy:560µJ (on), 320µJ (off)
Input Type:Standard
Gate Charge:70 nC
Td (on/off) @ 25°C:17ns/124ns
Test Condition:400V, 30A, 13Ohm, 15V
Reverse Recovery Time (trr):75 ns
Operating Temperature:-40°C ~ 175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:PG-TO247-3
0 Remaining View Similar

In Stock

$4.34
43

Please send RFQ , we will respond immediately.

Similar Products

Part Number IKW30N65ES5XKSA1 IKW40N65ES5XKSA1   IKW50N65ES5XKSA1   IKW30N65EL5XKSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active
IGBT Type Trench Trench Trench -
Voltage - Collector Emitter Breakdown (Max) 650 V 650 V 650 V 650 V
Current - Collector (Ic) (Max) 62 A 79 A 80 A 85 A
Current - Collector Pulsed (Icm) 120 A 160 A 200 A 120 A
Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 30A 1.7V @ 15V, 40A 1.7V @ 15V, 50A 1.35V @ 15V, 30A
Power - Max 188 W 230 W 274 W 227 W
Switching Energy 560µJ (on), 320µJ (off) 860µJ (on), 400µJ (off) 1.23mJ (on), 550µJ (off) 470µJ (on), 1.35mJ (off)
Input Type Standard Standard Standard Standard
Gate Charge 70 nC 95 nC 120 nC 168 nC
Td (on/off) @ 25°C 17ns/124ns 19ns/130ns 20ns/127ns 33ns/308ns
Test Condition 400V, 30A, 13Ohm, 15V 400V, 40A, 10Ohm, 15V 400V, 50A, 8.2Ohm, 15V 400V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr) 75 ns 73 ns 70 ns 100 ns
Operating Temperature -40°C ~ 175°C (TJ) -40°C ~ 175°C (TJ) -40°C ~ 175°C (TJ) -40°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3
Supplier Device Package PG-TO247-3 PG-TO247-3 PG-TO247-3 PG-TO247-3

Related Product By Categories

APT50GF120LRG
APT50GF120LRG
Microchip Technology
IGBT 1200V 135A 781W TO264
HGTP7N60A4
HGTP7N60A4
onsemi
IGBT 600V 34A TO220-3
IXXK100N60C3H1
IXXK100N60C3H1
IXYS
IGBT 600V 170A 695W TO264
IXYH40N120A4
IXYH40N120A4
IXYS
IGBT 1200V 40A GENX4 XPT TO-247
MGP15N40CL
MGP15N40CL
onsemi
IGBT 440V 15A 150W TO220AB
STGF12NB60KD
STGF12NB60KD
STMicroelectronics
IGBT 600V 14A 30W TO220FP
IXGK35N120BD1
IXGK35N120BD1
IXYS
IGBT 1200V 70A 350W TO264AA
IXGP12N100
IXGP12N100
IXYS
IGBT 1000V 24A 100W TO220AB
TIG052TS-TL-E
TIG052TS-TL-E
onsemi
IGBT 400V 8TSSOP
IXGQ50N60C4D1
IXGQ50N60C4D1
IXYS
IGBT 600V 90A 300W TO3P
NGTB15N60R2FG
NGTB15N60R2FG
onsemi
IGBT 600V 24A TO220F-3FS
SIGC18T60SNCX1SA3
SIGC18T60SNCX1SA3
Infineon Technologies
IGBT 3 CHIP 600V WAFER

Related Product By Brand

IDB10S60C
IDB10S60C
Infineon Technologies
DIODE SILICON 600V 10A D2PAK
BCR 162T E6327
BCR 162T E6327
Infineon Technologies
TRANS PREBIAS PNP 250MW SC75
IPB017N10N5ATMA1
IPB017N10N5ATMA1
Infineon Technologies
MOSFET N-CH 100V 180A TO263-7
BSC118N10NSG
BSC118N10NSG
Infineon Technologies
BSC118N10 - 12V-300V N-CHANNEL P
IRF7492PBF
IRF7492PBF
Infineon Technologies
MOSFET N-CH 200V 3.7A 8SO
ICE2PCS01GXUMA1
ICE2PCS01GXUMA1
Infineon Technologies
IC PFC CTRLR CCM 315KHZ 8DSO
CY5672
CY5672
Infineon Technologies
PROC BLE REMOTE CTRL REF DESIGN
CY2309CZXC-1H
CY2309CZXC-1H
Infineon Technologies
NO WARRANTY
CY8C3665AXA-010
CY8C3665AXA-010
Infineon Technologies
IC MCU 8BIT 32KB FLASH 100TQFP
MB90548GSPMC-G-196-BNDE1
MB90548GSPMC-G-196-BNDE1
Infineon Technologies
IC MCU 16BIT 128KB MROM 100LQFP
FM24W256-G
FM24W256-G
Infineon Technologies
IC FRAM 256KBIT I2C 1MHZ 8SOIC
S34ML04G100BHA003
S34ML04G100BHA003
Infineon Technologies
IC FLASH 4GBIT PARALLEL 63BGA