IKW30N65EL5XKSA1
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Infineon Technologies IKW30N65EL5XKSA1

Manufacturer No:
IKW30N65EL5XKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IKW30N65EL5XKSA1 Datasheet
ECAD Model:
-
Description:
IGBT 650V 30A FAST DIODE TO247-3
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Attributes

IGBT Type:- 
Voltage - Collector Emitter Breakdown (Max):650 V
Current - Collector (Ic) (Max):85 A
Current - Collector Pulsed (Icm):120 A
Vce(on) (Max) @ Vge, Ic:1.35V @ 15V, 30A
Power - Max:227 W
Switching Energy:470µJ (on), 1.35mJ (off)
Input Type:Standard
Gate Charge:168 nC
Td (on/off) @ 25°C:33ns/308ns
Test Condition:400V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr):100 ns
Operating Temperature:-40°C ~ 175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:PG-TO247-3
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$6.11
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Similar Products

Part Number IKW30N65EL5XKSA1 IKW30N65ES5XKSA1   IKW30N65NL5XKSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Obsolete
IGBT Type - Trench -
Voltage - Collector Emitter Breakdown (Max) 650 V 650 V 650 V
Current - Collector (Ic) (Max) 85 A 62 A 85 A
Current - Collector Pulsed (Icm) 120 A 120 A 120 A
Vce(on) (Max) @ Vge, Ic 1.35V @ 15V, 30A 1.7V @ 15V, 30A 1.35V @ 15V, 30A
Power - Max 227 W 188 W 227 W
Switching Energy 470µJ (on), 1.35mJ (off) 560µJ (on), 320µJ (off) 560µJ (on), 1.35mJ (off)
Input Type Standard Standard Standard
Gate Charge 168 nC 70 nC 168 nC
Td (on/off) @ 25°C 33ns/308ns 17ns/124ns 59ns/283ns
Test Condition 400V, 30A, 10Ohm, 15V 400V, 30A, 13Ohm, 15V 400V, 30A, 23Ohm, 15V
Reverse Recovery Time (trr) 100 ns 75 ns 59 ns
Operating Temperature -40°C ~ 175°C (TJ) -40°C ~ 175°C (TJ) -40°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-247-3 TO-247-3 TO-247-3
Supplier Device Package PG-TO247-3 PG-TO247-3 PG-TO247-3

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