Infineon Technologies-IKP39N65ES5XKSA1 - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):	650 V
Current - Collector (Ic) (Max):	62 A
Current - Collector Pulsed (Icm):	120 A
Vce(on) (Max) @ Vge, Ic:	1.85V @ 15V, 39A
Power - Max:	188 W
Switching Energy:	800µJ (on), 500µJ (off)
Input Type:	Standard
Gate Charge:	70 nC
Td (on/off) @ 25°C:	20ns/120ns
Test Condition:	400V, 39A, 12.8Ohm, 15V
Reverse Recovery Time (trr):	84 ns
Operating Temperature:	-40°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	PG-TO220-3

Infineon Technologies IKP39N65ES5XKSA1