Infineon Technologies-IKN04N60RC2ATMA1 - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	-
Voltage - Collector Emitter Breakdown (Max):	600 V
Current - Collector (Ic) (Max):	7.5 A
Current - Collector Pulsed (Icm):	12 A
Vce(on) (Max) @ Vge, Ic:	2.3V @ 15V, 4A
Power - Max:	6.8 W
Switching Energy:	95µJ (on), 62µJ (off)
Input Type:	Standard
Gate Charge:	24 nC
Td (on/off) @ 25°C:	8ns/126ns
Test Condition:	400V, 4A, 49Ohm, 15V
Reverse Recovery Time (trr):	39 ns
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-261-4, TO-261AA
Supplier Device Package:	PG-SOT223-3

Infineon Technologies IKN04N60RC2ATMA1