Infineon Technologies-IKD10N60RAATMA2 - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	Trench
Voltage - Collector Emitter Breakdown (Max):	600 V
Current - Collector (Ic) (Max):	20 A
Current - Collector Pulsed (Icm):	30 A
Vce(on) (Max) @ Vge, Ic:	2.1V @ 15V, 10A
Power - Max:	150 W
Switching Energy:	-
Input Type:	Standard
Gate Charge:	64 nC
Td (on/off) @ 25°C:	14ns/192ns
Test Condition:	400V, 10A, 23Ohm, 15V
Reverse Recovery Time (trr):	62 ns
Operating Temperature:	-40°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	PG-TO252-3

Infineon Technologies IKD10N60RAATMA2