Infineon Technologies-IKB15N65EH5ATMA1 - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):	650 V
Current - Collector (Ic) (Max):	30 A
Current - Collector Pulsed (Icm):	45 A
Vce(on) (Max) @ Vge, Ic:	2.1V @ 15V, 15A
Power - Max:	105 W
Switching Energy:	400µJ (on), 80µJ (off)
Input Type:	Standard
Gate Charge:	38 nC
Td (on/off) @ 25°C:	16ns/145ns
Test Condition:	400V, 15A, 39Ohm, 15V
Reverse Recovery Time (trr):	70 ns
Operating Temperature:	-40°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	PG-TO263-3

Infineon Technologies IKB15N65EH5ATMA1