Infineon Technologies-IKB03N120H2ATMA1 - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	-
Voltage - Collector Emitter Breakdown (Max):	1200 V
Current - Collector (Ic) (Max):	9.6 A
Current - Collector Pulsed (Icm):	9.9 A
Vce(on) (Max) @ Vge, Ic:	2.8V @ 15V, 3A
Power - Max:	62.5 W
Switching Energy:	290µJ
Input Type:	Standard
Gate Charge:	22 nC
Td (on/off) @ 25°C:	9.2ns/281ns
Test Condition:	800V, 3A, 82Ohm, 15V
Reverse Recovery Time (trr):	42 ns
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	PG-TO263-3-2

Infineon Technologies IKB03N120H2ATMA1