Infineon Technologies-IHW50N65R6XKSA1 - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	-
Voltage - Collector Emitter Breakdown (Max):	650 V
Current - Collector (Ic) (Max):	100 A
Current - Collector Pulsed (Icm):	150 A
Vce(on) (Max) @ Vge, Ic:	1.6V @ 15V, 50A
Power - Max:	251 W
Switching Energy:	1.5mJ (on), 660µJ (off)
Input Type:	Standard
Gate Charge:	199 nC
Td (on/off) @ 25°C:	21ns/261ns
Test Condition:	400V, 50A, 10Ohm, 15V
Reverse Recovery Time (trr):	108 ns
Operating Temperature:	-40°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-247-3
Supplier Device Package:	PG-TO247-3

Infineon Technologies IHW50N65R6XKSA1