Infineon Technologies-IHW25N120R2FKSA1 - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	NPT
Voltage - Collector Emitter Breakdown (Max):	1200 V
Current - Collector (Ic) (Max):	50 A
Current - Collector Pulsed (Icm):	75 A
Vce(on) (Max) @ Vge, Ic:	1.8V @ 15V, 25A
Power - Max:	365 W
Switching Energy:	1.59mJ
Input Type:	Standard
Gate Charge:	60.7 nC
Td (on/off) @ 25°C:	-/324ns
Test Condition:	600V, 25A, 10Ohm, 15V
Reverse Recovery Time (trr):	-
Operating Temperature:	-40°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-247-3
Supplier Device Package:	PG-TO247-3-1

Infineon Technologies IHW25N120R2FKSA1