Infineon Technologies-IHFW40N65R5SXKSA1 - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):	650 V
Current - Collector (Ic) (Max):	61 A
Current - Collector Pulsed (Icm):	120 A
Vce(on) (Max) @ Vge, Ic:	2V @ 15V, 40A
Power - Max:	108 W
Switching Energy:	1.52mJ (on), 700µJ (off)
Input Type:	Standard
Gate Charge:	142 nC
Td (on/off) @ 25°C:	44ns/363ns
Test Condition:	400V, 40A, 23.1Ohm, 15V
Reverse Recovery Time (trr):	103 ns
Operating Temperature:	-40°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-247-3
Supplier Device Package:	PG-HSIP247-3-2

Infineon Technologies IHFW40N65R5SXKSA1