Infineon Technologies-IHD10N60RA - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	Trench
Voltage - Collector Emitter Breakdown (Max):	600 V
Current - Collector (Ic) (Max):	20 A
Current - Collector Pulsed (Icm):	30 A
Vce(on) (Max) @ Vge, Ic:	1.9V @ 15V, 10A
Power - Max:	110 W
Switching Energy:	270µJ
Input Type:	Standard
Gate Charge:	62 nC
Td (on/off) @ 25°C:	-/170ns
Test Condition:	400V, 10A, 23Ohm, 15V
Reverse Recovery Time (trr):	-
Operating Temperature:	-40°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	PG-TO252-3-11

Infineon Technologies IHD10N60RA