Infineon Technologies-IGZ50N65H5XKSA1 - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	Trench
Voltage - Collector Emitter Breakdown (Max):	650 V
Current - Collector (Ic) (Max):	85 A
Current - Collector Pulsed (Icm):	200 A
Vce(on) (Max) @ Vge, Ic:	2.1V @ 15V, 50A
Power - Max:	273 W
Switching Energy:	410µJ (on), 190µJ (off)
Input Type:	Standard
Gate Charge:	109 nC
Td (on/off) @ 25°C:	20ns/250ns
Test Condition:	400V, 25A, 12Ohm, 15V
Reverse Recovery Time (trr):	-
Operating Temperature:	-40°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-247-4
Supplier Device Package:	PG-TO247-4

Infineon Technologies IGZ50N65H5XKSA1