Infineon Technologies-IGW30N65L5XKSA1 - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	-
Voltage - Collector Emitter Breakdown (Max):	650 V
Current - Collector (Ic) (Max):	85 A
Current - Collector Pulsed (Icm):	120 A
Vce(on) (Max) @ Vge, Ic:	1.35V @ 15V, 30A
Power - Max:	227 W
Switching Energy:	470µJ (on), 1.35mJ (off)
Input Type:	Standard
Gate Charge:	168 nC
Td (on/off) @ 25°C:	33ns/308ns
Test Condition:	400V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr):	-
Operating Temperature:	-40°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-247-3
Supplier Device Package:	PG-TO247-3

Infineon Technologies IGW30N65L5XKSA1